Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure
نویسندگان
چکیده
A theoretical study of the effects of applied magnetic fields and hydrostatic pressure on the electron-hole transition energies in selfassembled InAs/GaAs quantum dots is presented. The effective-mass approximation and a model of a cylindrical-shaped quantum dot with in-plane parabolic potential have been used to describe the InAs/GaAs quantum dots. Present theoretical results are in quite good agreement with experimental measurements of the magnetic field and pressure dependence of the exciton transition energies in InAs/GaAs selfassembled quantum dots. q 2005 Elsevier Ltd. All rights reserved. PACS: 71.35.Cc; 71.35.Ji; 71.55.Eq; 78.66.Fd
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ورودعنوان ژورنال:
- Microelectronics Journal
دوره 36 شماره
صفحات -
تاریخ انتشار 2005